JPS6155782B2 - - Google Patents
Info
- Publication number
- JPS6155782B2 JPS6155782B2 JP55056650A JP5665080A JPS6155782B2 JP S6155782 B2 JPS6155782 B2 JP S6155782B2 JP 55056650 A JP55056650 A JP 55056650A JP 5665080 A JP5665080 A JP 5665080A JP S6155782 B2 JPS6155782 B2 JP S6155782B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- conductive layer
- oxide film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 62
- 238000000034 method Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5665080A JPS56152262A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5665080A JPS56152262A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56152262A JPS56152262A (en) | 1981-11-25 |
| JPS6155782B2 true JPS6155782B2 (en]) | 1986-11-29 |
Family
ID=13033229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5665080A Granted JPS56152262A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56152262A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01128896U (en]) * | 1988-02-26 | 1989-09-01 | ||
| JPH0331990A (ja) * | 1989-06-28 | 1991-02-12 | Matsushita Refrig Co Ltd | カップ自動販売機のカートリッジタンク式給水装置 |
-
1980
- 1980-04-25 JP JP5665080A patent/JPS56152262A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01128896U (en]) * | 1988-02-26 | 1989-09-01 | ||
| JPH0331990A (ja) * | 1989-06-28 | 1991-02-12 | Matsushita Refrig Co Ltd | カップ自動販売機のカートリッジタンク式給水装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56152262A (en) | 1981-11-25 |
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